Publication | Closed Access
Scalable Adaptive Spintronic Reconfigurable Logic Using Area-Matched MTJ Design
49
Citations
19
References
2016
Year
Non-volatile MemoryEngineeringComputer ArchitectureSpin-transfer TorqueHardware SecurityMagnetismNanoelectronicsProgrammable Logic ArrayMemory DeviceElectrical EngineeringRandom Access MemoryComputer EngineeringMagnetoresistive Random-access MemoryReconfigurable ArchitectureMicroelectronicsReconfigurabilitySpintronicsN-input Stt-lut PdpApplied PhysicsSemiconductor Memory
Spin-transfer torque (STT) random access memory has been researched as a promising alternative for static random access memory in reconfigurable fabrics, particularly in lookup tables (LUTs), due to its nonvolatility, low standby and static power, and high integration density features. In this brief, we leverage physical characteristics of magnetic tunnel junctions (MTJs) to design a unique reference MTJ which has a calibrated resistance matching the STT-based LUT (STT-LUT) circuit requirements to provide optimal reading operation. Results obtained show 42% and 70% power-delay product (PDP) improvement over previous MTJ-based LUT designs. Moreover, a four-input adaptive STT-based LUT (A-LUT) is proposed based on the developed STT-LUT, which is configurable to function in seven independent modes. An n-input A-LUT exhibits PDP which can be a fraction of n-input STT-LUT PDP, when performing two-input to (n-1)-input Boolean logic functions.
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