Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

Abstract

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure γ-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase consisting of both γ- and α-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS), allow the derivation of a self-consistent reaction mechanism. Finally, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cycle stability and near-theoretical capacity.