Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)

Short-channel effect in fully depleted SOI MOSFETs

K.K. Young · IEEE Transactions on Electron Devices · 1989 · 908 citations

Engineering, Electrical Engineering, Microelectronics +16

Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

Yasuhisa Ōmura, S. Horiguchi, M. Tabe et al. · IEEE Electron Device Letters · 1993 · 275 citations

Engineering, Electrical Engineering, Physics +13

A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs

Qiang Chen, Evans M. Harrell, J.D. Meindl · IEEE Transactions on Electron Devices · 2003 · 253 citations

Engineering, Electrical Engineering, Electronic Materials +16

Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits

Hossain M. Fahad, Casey Smith, Jhonathan P. Rojas et al. · Nano Letters · 2011 · 160 citations

Engineering, Electrical Engineering, Materials Science +17

Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs

Hamdy Abd El Hamid, Jaume Roig Guitart · IEEE Transactions on Electron Devices · 2007 · 151 citations

Engineering, Electrical Engineering, Circuit Theory +16