Model of Steady-State Injection Processes in a High-Power Laser-Thyristor Based on Heterostructure With Internal Optical Feedback

Abstract

Analytical model of a low-voltage laser-thyristor based on a semiconductor heterostructure has been developed. The model describes static current-voltage (I-V) characteristics and accounts for the nature of the voltage blocking and negative differential resistance in multijunction heterostructures with optical feedback. It is shown that a region of the I-V characteristic saturation appears in a laser thyristor in the ON-state with increasing current through the device. It is shown that optimizing the base region parameters and emission characteristics of the active region of the diode part makes it possible to preserve high efficiency of injection processes in the laser thyristor up to current densities exceeding tens of kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . It is demonstrated that switching from the blocking to the conducting state by control currents with densities of several A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is possible.