The Journal of Physical Chemistry Letters · 2011 · 299 citations · 54 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsSemiconductor MaterialsDopingNanoelectronicsNanostructured Electronic MaterialsSemiconductor Device MaterialsSemiconductor SurfacesSurface PhysicsAromatic Stacking InteractionsBandgap EngineeringCharge Carrier DensityCharge Carrier MobilityGraphene Field-effect TransistorsGraphene Surface ChemistryGraphene-based MaterialsLithographic Surface Patterning
Intrinsic graphene is a semimetal or zero bandgap semiconductor, which hinders its applications for nanoelectronics. To develop high-performance nanodevices with graphene, it is necessary to open the bandgap and precisely control the charge carrier type and density. In this perspective, we focus on tailoring the electronic properties of graphene by noncovalent stacking with aromatic molecules through π–π interaction. Different types of molecules (functioning as either an electron donor or acceptor when stacked with graphene) as reported in recent literature are presented regarding surface patterning, bandgap engineering, surface doping, as well as applications in nanodevices, particularly the field-effect transistors (FETs). On the basis of the current progress along this research line, future issues and challenges are also briefly discussed.
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