IEEE Journal of Selected Topics in Quantum Electronics · 2016 · 50 citations · 23 references
EngineeringElectrical EngineeringMaterials ScienceOptical MaterialsOptoelectronicsPhotonicsLaser Host MaterialsLaser OpticsLaser PhysicsOptical Properties Of SemiconductorsSemiconductor LasersUltrafast OpticsHigh-power LasersPulsed LasersQ SwitchingQ-switched LasersSolid-state LasersStimulated EmissionUltra-short Pulse GenerationUltrafast Pulse Generation
The passive Q-switching characteristics of a diode-pumped Tm,Ho:YAP laser at 2 μm based on a MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> saturable absorber (SA) is presented for the first time. Pulses as short as 435 ns under a repetition rate of about 55 kHz were generated at the incident pump power of 8.4 W, corresponding to the pulse peak power up to 11.3 W. This is, to the best of our knowledge, the highest pulse peak power, ever obtained from MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based passively Q-switched 2-μm lasers. The experimental results sufficiently validated the feasibility of MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> 2</sub> as SA for solid-state 2-μm lasers.
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