Propagation of ripple patterns on Si during ion bombardment

Abstract

The lateral propagation of surface ripples on Si, generated by Xe ion irradiation with and without codeposition of Fe surfactant atoms, was investigated by scanning electron microscopy with the help of micron-sized marker structures prepared by focused ion beam milling. For 10-keV Xe ion irradiation of Si at oblique incidence between 62 and 70\ifmmode^\circ\else\textdegree\fi{}, we determine lateral ripple propagation velocities varying from \ensuremath{-}1.9 to $+$2.9 nm per 10${}^{15}$ Xe ions/cm${}^{2}$. The propagation direction changes from opposite to the projected direction of the incident ion beam to along the projected beam direction within a narrow angular regime. At 67\ifmmode^\circ\else\textdegree\fi{}, the pattern is almost static. The result is in good agreement with predictions from the theoretical model of Bradley and Harper. For perpendicular incident 5-keV Xe ions and oblique codeposition of Fe surfactant atoms, we find that ripple patterns propagate across the surface with a negative ripple propagation velocity of about \ensuremath{-}0.7 nm per 10${}^{15}$ Xe ions/cm${}^{2}$, i.e., opposite to the projected deposition direction of Fe surfactant atoms. The novel experimental method to determine the lateral ripple propagation based on markers set with a focused ion beam system does not require an in situ analysis and can therefore be applied in general to analyze the dynamics of ion beam-induced patterns.