Journal of Applied Physics · 2014 · 14 citations · 25 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsThin FilmsAntiferromagnetismFerromagnetic MaterialsMagnetic AnisotropyMagnetic OxidesMagnetic Properties Of SolidsMagnetic Thin FilmsAnisotropic MagnetoresistanceAntiferromagnetic Thin FilmsEpitaxial Magnetic FilmsEpitaxial Thin FilmsHysteresisMagnetization In Thin FilmsMagnetoresistanceThin Film Magnetism
The magnetic field and temperature dependent anisotropic magnetoresistance (AMR) of the epitaxial grown Pr0.5Sr0.5MnO3 thin films was investigated. It was found that the magnetoresistance exhibited the characteristics of magnetic polaron hopping. A two-fold symmetric AMR occurred in the ferromagnetic region (∼220 K < T < ∼150 K), while a four-fold symmetric AMR appeared under a high magnetic field in the antiferromagnetic orbital ordered region (T < ∼150 K). The angular dependence of the resistance showed a hysteresis effect under magnetic field at low temperature. It is believed that these phenomena are attributed to the spin canting effect, which originates from the melting of orbital ordering under the external magnetic field in the antiferromagnetic region.
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The role of strain in magnetic anisotropy of manganite thin films
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Natural Sciences, Materials Engineering, Materials Science +17
Structural transitions in the manganite Pr0.5Sr0.5MnO3
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