90–140 GHz frequency octupler in Si/SiGe BiCMOS using a novel bootstrapped doubler topology

Abstract

This paper presents a novel bootstrapped frequency doubler, which is used to implement a wideband frequency multiplier-by 8 with balanced differential output. In terms of conversion gain, common mode rejection, and output balance, the proposed frequency doubler achieved better performance than the conventional Gilbert-cell frequency doubler by adopting the proposed bootstrapping technique. Wideband matching was also applied to broaden the bandwidth. The circuit is implemented in 0.13μm SiGe:C BiCMOS and operated from 90-140 GHz with an 8 dB gain variation, a 22dB conversion gain, a -1 to 7 dBm output power, and a power consumption of 250mW.