EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsRadio-frequency Integrated CircuitsMicrowave Integrated Circuit DesignMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated CircuitsPower InputRadio-frequency Integrated Circuit Design
This work describes a monolithic integrated active frequency doubler for frequencies up to 42 GHz in a pre-production 0.4 /spl mu/m SiGe bipolar technology. Gain is achieved at the input power of -12 dBm between 18 and 42 GHz with maximum of 8.6 dB at 30 GHz. The circuit may be used for future broadband wireless services like LMDS at 28 and 38 GHz or MVDS at 42 GHz.
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SiGe bipolar technology for mixed digital and analogue RF applications
J. Bbck, T.F. Meister, H. Knapp et al. · 2002 · 30 citations