Anisotropic Etching of Atomically Thin MoS₂

Abstract

Exposure to oxygen at 300–340 °C results in triangular etch pits with uniform orientation on the surfaces of atomically thin molybdenum disulfide (MoS 2 ), indicating anisotropic etching terminating on lattice planes. The triangular pits grow laterally with oxidation time. The density of pits scarcely depends on oxidation time, temperature, and MoS 2 thickness but varies significantly from sample to sample, indicating that etching is initiated at native defect sites on the basal plane surface rather than activated by substrate effects such as charged impurities or surface roughness. Raman spectroscopy confirms that oxygen treatment produces no molybdenum oxide (MoO 3 ) below 340 °C. However, upon oxidation above 200 °C, the Raman A 1g mode upshifts and the linewidth decreases, indicating p-type doping of MoS 2 . Oxidation at 400 °C results in complete conversion to MoO 3 .