Quantum Analytical Modeling for Device Parameters and I-V Characteristics of Nanoscale Dual-Material Double-Gate Silicon-on-Nothing MOSFET

Abstract

This paper presents the quantum analytical model, based on the self-consistent solution of 1-D Schrödinger equation and 2-D Poisson's equation for the ultrascaled dual-material double-gate (DMDG) silicon-on-nothing MOSFET structure. The quantum mechanical effects (QMEs) have been incorporated in our model to derive the analytical current expressions for the first time ever. Extensive calculations have been carried out to analyze the QMEs on such device performance parameters, like electric field, transconductance, drain conductance, and voltage gain. A comparative analysis based on the drain current has been presented in this paper for the classical and for the quantum model. The authenticity of our proposed quantum model for the DMDG structure is verified by the agreement among the results obtained from the analytical model as well as simulations.