The DARPA Wide Band Gap Semiconductors for RF Applications (WBGS-RF) Program: Phase II Results

Abstract

Dramatic progress has been achieved, during Phase II of the Wide Band Gap Semiconductors for RF Applications (WBGS-RF) program, sponsored by the Defense Advanced Research Projects Agency (DARPA), in extending the lifetime of high performance gallium nitride high electron mobility transistors, operating at frequencies up to 40 GHz. This paper summarizes the significant progress made by the contractor teams participating in the Phase II portion of the program.