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Epitaxial Growth of EuBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-y</sub> Films on YAlO<sub>3</sub> Single Crystals
36
Citations
6
References
1990
Year
Materials ScienceMaterials EngineeringSuperconducting MaterialDielectric ConstantDesirable Dielectric PropertiesEngineeringCrystalline DefectsHigh-tc SuperconductivityCrystal Growth TechnologyCondensed Matter PhysicsApplied PhysicsSuperconductivityHigh Tc SuperconductorsThin Film Process TechnologyThin FilmsEpitaxial GrowthCrystallography
Epitaxial growth of 1-2-3 superconductor films is reported on a new substrate material that possesses desirable dielectric properties. Magnetron-sputtered EuBa 2 Cu 3 O 7- y films on YAlO 3 (001) show excellent properties with a T c of 91 K. Films are epitaxially grown with the c -axis oriented normal to the surface, and the a - and b -axes ordered in the plane. The high-frequency (50 GHz) surface resistance of a film is 2 mΩ at 30 K. The dielectric constant of YAlO 3 is 16. The dielectric loss tangent at 10 GHz is as low as 7.3×10 -5 at 300 K and 2×10 -6 at 40 K. YAlO 3 -based films have considerable potential for high-frequency application.
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