Publication | Closed Access
Transistor wars
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2011
Year
Hardware SecurityElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi DesignDramatic ChangeTechnology ScalingNanoelectronicsTransistor DensityComputer ArchitectureComputer EngineeringVlsiTechnologyMicroelectronicsDevice Architecture3D IntegrationBeyond Cmos
Intel announced a major shift to 3‑D transistor architecture, a move that could extend Moore’s Law and is part of a broader industry debate over new CMOS designs. The company will build transistors in three dimensions, a shift that—if all goes well—could add at least half a dozen years to Moore’s Law. Intel’s announcement has sparked a growing schism among chipmakers and signals that 3‑D CMOS designs will enable low‑power mobile electronics with advanced capabilities.
Intel announced the most dramatic change to the architecture of the transistor since the device was invented. The company will henceforth build its transistors in three dimensions, a shift that-if all goes well-should add at least a half dozen years to the life of Moore's Law, the biennial doubling in transistor density that has driven the chip industry for decades. But Intel's big announcement was notable for another reason: It signaled the start of a growing schism among chipmakers. Despite all the great advantages of going 3-D, a simpler alternative design is also nearing production. Although it's not yet clear which device architecture will win out, what is certain is that the complementary metal-oxide semiconductor (CMOS) field-effect transistor (FET)-the centerpiece of computer processors since the 1980s-will get an entirely new look. And the change is more than cosmetic; these designs will help open up a new world of low-power mobile electronics with fantastic capabilities.