High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron

Abstract

We report novel nanoscale synapse and neuron devices for ultra-high density neuromorphic system. By adopting a Mo electrode, the redox reaction at Mo/Pr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> Ca <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> MnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (PCMO) interface was controlled which in turn significantly improve synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Furthermore, The NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based Insulator-Metal Transition (IMT) oscillator was developed for neuron application. Finally, we have experimentally confirmed the realization of pattern recognition with high accuracy using the 11k-bit Mo/PCMO synapse array and NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> oscillator neuron.