Publication | Open Access
Crystallographic and optical characterizations of Ag(Ga,Al)Te<sub>2</sub> layers grown on <i>c</i> ‐plane sapphire substrates by closed space sublimation
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2016
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Optical MaterialsEngineeringCrystal Growth TechnologySolid-state ChemistryBandgap EnergyOptical PropertiesClosed Space SublimationEpitaxial GrowthMaterials SciencePhysicsCrystalline DefectsOptical CharacterizationsGallium OxideCrystallographySurface ScienceApplied PhysicsTe 2CrystalsAbstract Ag
Abstract Ag(Ga,Al)Te 2 layers were grown by the closed space sublimation method on c ‐plane sapphire substrates. The source used was AgAlTe 2 /AgGaTe 2 mixture or AgAlTe 2 /Ga 2 Te 3 mixture. The crystallographic property of Ag(Ga,Al)Te 2 layers was analyzed by X‐ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te 2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga 1‐x ,Al x )Te 2 was feasible by varying the source mole ratio Al/(Ga+Al). (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)