Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 <i>μ</i>m

Abstract

Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten “W”-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.