Publication | Closed Access
IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates
20
Citations
26
References
2016
Year
Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringIvt MeasurementsApplied PhysicsHvpe Gan SubstratesGan Power DeviceDrift Layers
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