Photon Effects in Hg_1−x Cdx Te

Abstract

Infrared detectors prepared from the alloy semiconductor Hg1−xCdxTe exhibit a family of relative response characteristics throughout the 1-μ to 14-μ spectral interval. Both photoconductive and photovoltaic effects are observed. The relative spectral responses shift to longer wavelengths with decreasing temperature. Photoconductive response time measurements at 77°K reveal values no greater than 10−7 sec. Detectors are limited by either thermal noise or current (1/f) noise, depending upon measurement frequency and magnitude of bias current.