Publication | Closed Access
Silicon on Ceramics—A New Integration Concept for Silicon Devices to LTCC
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2009
Year
EngineeringNew Bonding TechniqueMechanical EngineeringIntegrated CircuitsCeramic PowdersInterconnect (Integrated Circuits)Micro-electromechanical SystemWafer Scale ProcessingNew Integration ConceptElectronic PackagingCeramic TechnologyMaterials ScienceMaterials EngineeringElectrical EngineeringCeramicsCeramic MaterialChip AttachmentMicroelectronicsStructural CeramicFlexible ElectronicsMicrofabricationBonding StrengthCeramics MaterialsSilicon Devices
A new integration concept for MEMS-devices to ceramic substrates based on a new bonding technique between nano-scaled black silicon (BSi) and an adapted LTCC substrate is presented. The novel technique allows combining advantages of silicon and ceramic technology whereby a new wafer compound material (silicon on ceramics) and innovative ceramic carrier as well as chip packages become available. The new compound is fabricated by the use of standard technologies (reactive ion etching, lamination, and pressure assisted sintering) without additional materials and devices. A bonding strength up to 1750 N/cm2 and gas tightness are remarkable features of the bond interface. Simultaneously, electrical interconnects between silicon and LTCC can be manufactured during lamination and sintering.