Microstructure and Electrical Properties of La<sub>2</sub>O<sub>3</sub>-Doped ZnO-Bi<sub>2</sub>O<sub>3</sub> Based Varistor Ceramics

Abstract

La2O3-doped ZnO-Bi2O3-based varistor ceramics were obtained by a solid reaction route, and the microstructure and electrical properties of the varistor ceramics were studied in this paper. The results showed with addition of 0-1.00mol% La2O3, La2O3-doped ZnO-based varistor ceramics were prepared in this paper with the voltage gradient of 77-503V/mm, the nonlinear coefficient of 2.4-36.8, and the leakage current of 0.09-494μA. The results also showed with addition of 0.08mol% La2O3, La2O3-doped ZnO-based varistor ceramics exhibit comparatively ideal comprehensive electrical properties. Such as the threshold voltage was 320V/mm, the nonlinear coefficient was 36.8 and the leakage current was 0.29μA. The doping of La2O3 affects the form and decomposition of the pyrochlore.