Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs

Abstract

The first low-threshold 1.55 µm lasers grown on GaAs are reported. Lasing at 1.55 µm was observed from a 20×2400 µm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.