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Preparation of CuSbS2 Thin Films by Co-Sputtering and Solar Cell Devices with Band Gap-Adjustable n-Type InGaN as a Substitute of ZnO

Materials ScienceIi-vi SemiconductorEngineeringNanoelectronicsNanotechnologyOxide ElectronicsApplied PhysicsCusbs2 Thin FilmsSemiconductor MaterialThin FilmsSolar Cell DevicesThin Film Processing