Temperature dependent electrical properties and barrier parameters of photosensitive heterojunctions n-TіN/p-Cd_1−xZn_xTe

Abstract

Photosensitive heterojunctions n-TiN/p-Cd1−xZnxTe were fabricated by the deposition of titanium nitride thin films by means of dc reactive magnetron sputtering onto cleaved single crystal substrates Cd1−xZnxTe with p-type conductivity. We investigated the temperature dependence of the height of the potential barrier and the series resistance of the n-TiN/p-Cd1−xZnxTe heterojunctions. The dominating current transport mechanisms through the heterojunctions at forward and reverse bias were determined. The n-TiN/p-Cd1−xZnxTe heterojunctions possessed a significantly higher value open circuit voltage Voc = 0.65 V compared to the open circuit voltage Voc = 0.35 V of the n-TiN/p-CdTe heterojunctions under the same illumination conditions [Solovan et al 2014 Semicon. Sci. Technol. 29 015007].