HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment - Concepedia

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HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

20

Citations

25

References

2015

Year

Khushabu Agrawal, Vilas Patil, Anil G. Khairnar, Ashok M. Mahajan

Applied Surface Science

Materials ScienceElectrical EngineeringEngineeringApplied PhysicsMultilayer HeterostructuresMicroelectronicsSemiconductor DeviceHfo2 Gate Dielectric

References

	Year	Citations

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