IEEE Transactions on Terahertz Science and Technology · 2013 · 15 citations · 25 references
EngineeringElectrical EngineeringMaterials ScienceMicrowave EngineeringSemiconductor MaterialsThin FilmsHigh-frequency Semiconductor DevicesMicrowave MixersMicrowave Noise AnalysisMicrowave Semiconductor DevicesBandwidthBandwidth MeasurementConversion GainGain BandwidthMixersMixers Noise AnalysisNoise BandwidthPhonon-phonon Interactions
A noise bandwidth (NBW) of 6-7 GHz was obtained for hot-electron bolometer (HEB) mixers made of 10 nm MgB <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films. A systematic investigation of the (IF) gain bandwidth as a function of the MgB <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film thickness (30, 15, and 10 nm) is also presented. The gain bandwidth (GBW) of 3.4 GHz was measured for a 10 nm film, corresponding to a mixer time constant of 47 ps. For 10 nm films a reduction of the GBW was observed with the reduction of the critical temperature ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Tc</i> ). Experimental data were analyzed using the two-temperature model. From the theoretical analysis, the electron-phonon time (τ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e - ph</sub> ), the phonon escape time (τ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">esc</sub> ) and the electron and phonon specific heats (c <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> , c <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ph</sub> ) were extrapolated giving the first model for HEB mixers of MgB <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films.
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