Electrical Properties of (Bi, La)₄Ti₃O₁₂ Based Thin Films Prepared by RF Sputtering

Abstract

We describe the preparation of (Bi, La) 4 Ti 3 O 12 thin films on various substrates such as MgO, glass Pt(100)/ MgO(100) and Pt(111)/glass by rf magnetron sputtering. Perovskite-type thin films were prepared on these substrates. The chemical composition of the thin films was found to be (Bi 3.56 La 0.57 )Ti 3 O 12 by ICP analysis. Thin film on Pt(100)/MgO(100) substrate showed fairly good fatigue properties: initial state, P r =7.5 µ C/cm 2 , E c =174 kV/cm and after 10 9 pulses, P r =5.7 µ C/cm 2 , E c =117 kV/cm.