Impact of Aminosilane Precursor Structure on Silicon Oxides by Atomic Layer Deposition

Abstract

This paper reports the influence of BTBAS (bis(tertiarybutylamino)silane), BDEAS (bis(diethylamino)silane), and TDMAS (tris(dimethylamino)silane), three different structures of aminosiliane precursor deposited on silicon oxide by atomic layer deposition. TDMAS showed a 40% lower deposition rate while BTBAS and BDEAS demonstrated superior deposition performance for an ALD process. Amongst BTBAS and BDEAS, BTBAS provided a higher deposition rate and wider temperature window. Bis(amino)silanes provided improved performance relative to tris(amino)silanes.