Publication | Closed Access
Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells
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Citations
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References
2015
Year
PhotonicsElectrical EngineeringPhotoluminescenceEngineeringPhysicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorOptoelectronicsCompound Semiconductor
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