Novel Ferroelectric Polymer Memory Coupling Two Identical Thin‐Film Transistors

Abstract

A novel ferroelectric memory cell is proposed by coupling two identical organic thin-film transistors. This cell takes advantage of the high coercive field of the organic polymer (E c > 50 MV m−1) to change the transistor function. The drive and memory thin-film transistor operation is achieved by applying a gate voltage, below or above E c of the ferroelectric material, respectively. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.