A bipolar 2500-gate subnanosecond masterslice LSI

Abstract

A bipolar 2500-gate subnanosecond masterslice LSI has been developed for use in computer mainframes. A walled-emitter structure has been realized by using double boron ion implantation with an n-type epitaxial layer to obtain high performance and high packing density. A new cell composed of a pair of adjacent gates provides high utilization of input transistors. A gate delay of 0.58 ns with power dissipation of 0.54 mW/gate has been achieved. The masterslice has been applied to an 18-bit memory data register circuit consisting of 1983 internal logic gates and has been mounted on a new 224-pin plug-in package.