Publication | Closed Access
Realization of highly-dense Al<sub>2</sub>O<sub>3</sub> gas barrier for top-emitting organic light-emitting diodes by atomic layer deposition
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Citations
21
References
2015
Year
Aluminium NitrideOptical MaterialsEngineeringOrganic ElectronicsOptoelectronic DevicesThin Film Process TechnologyLight-emitting DiodesAtomic Layer DepositionThin Film ProcessingThin-film TechnologyMaterials ScienceThin-film FabricationOptoelectronic MaterialsOrganic SemiconductorNew Lighting TechnologyThin Film MaterialsWhite OledSolid-state LightingElectronic MaterialsSurface ScienceApplied PhysicsThin FilmsOptoelectronics
In this paper Al<sub>2</sub>O<sub>3</sub> films are prepared with a method of atomic layer deposition (ALD) as the thin film encapsulation technology for top-emitting organic light-emitting diodes (TE-OLED).
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