Fabrication of Fe-N thin films by the plasma evaporation method and analysis of N2 plasma.

Abstract

The relationship between the formation of iron nitride films and plasma parameters (space potential Vs, electron density Ne and electron temperature Te) were investigated on plasma reactive evaporation. Vs, Ne and Te of the reactive nitrogen plasma were determined by the single probe method. The formation of the nitrides was found to depend strongly on Vs and Ne, respectively. The nitrogen concentration increased with increases in Ne and Vs. Especially α'phase was obtained on the condition of Ne=1∼3×109cm−3 and Vs=50 V or 300∼500 V. The nitride process in the plasma reactive evaporation was also investigated by using the evaporated iron films exposed to nitrogen plasma. The nitrides were found to be mainly formed on the surface of the films.