Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators

K. Sundaresan, G.K. Ho, Siavash Pourkamali, Farrokh Ayazi

IEEE Journal of Solid-State Circuits · 2007 · 119 citations · 18 references

Concepts

Abstract

The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (> 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100degC as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-mum CMOS process.

References

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