Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon–Germanium Films

Abstract

Low-pressure chemical vapor deposition of silicon–germanium and its SPC below are investigated. The effects of precursor ratio [ ], pressure, and temperature are examined with the goals of film composition tunability and high deposition rates. is found to be a better source gas than DCS because the decomposition rate of is faster than that of DCS during the deposition process. In the system, the binary deposition mechanism is well explained by the "enhancement" model. The deposition temperature and chamber pressure affect the conversion factor, enabling independent tuning of the film composition and deposition rate. Amorphous and films are obtained at 350 and by adjusting the deposition conditions while keeping the deposition rates high. Compositional effects of the SiGe films on the SPC are also investigated.