IEEE Photonics Technology Letters · 1994 · 12 citations · 13 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsRecombinationLaser DiodesNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor LasersBarrier LayersCarrier Recombination DynamicsExperimental StudiesLaser Linewidth NarrowingLinewidth BroadeningLinewidth NarrowingSpectral Line BroadeningSpontaneous Emission
A new theory is proposed to explain spectral linewidth rebroadening in MQW-DFB LDs. This is based on the idea that spontaneous emission recombination in the SCH and barrier layers may cause excess spectral linewidth broadening. Theoretical and experimental studies show that excess spectral linewidth broadening is proportional to the recombination current in the SCH/barrier layers. This current increases monotonically as output power increases.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Theory of the linewidth of semiconductor lasers
C. H. Henry · IEEE Journal of Quantum Electronics · 1982 · 2.4K citations
Well-barrier hole burning in quantum well lasers
W. Rideout, W. F. Sharfin, Emil S. Köteles et al. · IEEE Photonics Technology Letters · 1991 · 206 citations
Corrugation-pitch modulated MQW-DFB lasers with narrow spectral linewidth
M. Okai, Taku Tsuchiya, K. Uomi et al. · IEEE Journal of Quantum Electronics · 1991 · 73 citations