Fabrication and characterisation of Si-Si _0.7 Ge _0.3 quantum dot lightemitting diodes

Abstract

The fabrication and room temperature operation of 50 nm quantum dot light emitting diodes based on Si-Si0.7Ge0.3 superlattices is described. The diodes emit light efficiently at 1.3 µm at room temperature with a threshold injection current of ~0.1 pA/dot.