Gate-control strategies for snubberless operation of series connected IGBTs

Abstract

Increasing the operation voltage and hence the switching power by series connection of IGBT-modules causes transient and static voltage imbalances. To achieve snubberless operation, novel gate-control strategies have been developed. Active gate-controlled voltage balancing and gate-side di/dt-control as well as dv/dt-control are presented in theory and with measurement results.