Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors

Abstract

High-performance inkjet-printed top-gate/bottom-contact organic field-effect transistors (OFETs) and complementary electronic circuitry are reported. Blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) dielectrics effectively reduce the operation voltage. At the optimized blend ratio of 7 : 3 wt.% for P(VDF-TrFE) and PMMA, both p- and n-type printed OFETs show well-balanced high field-effect mobility values (~ 0.5 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s) and low threshold voltages ( ±5 V). The high-performance inverters and various digital logic gates such as nand, nor, or, and xor are demonstrated on flexible plastic substrates. The inverter shows a high gain (>; 25), an ideal inverting voltage near half of the supplied bias (1/2 <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VDD</i> ), and a high noise immunity (up to 79 % of 1/2 <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VDD</i> ).