Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal–organic species

Abstract

CVD graphene has been n- and p-doped using redox-active, solution-processed metal–organic complexes. Electrical measurements, photoemission spectroscopies, and Raman spectroscopy were used to characterise the doped films and give insights into the changes. The work function decreased by as much as 1.3 eV with the n-dopant, with contributions from electron transfer and surface dipole, and the conductivity significantly increased.