Japanese Journal of Applied Physics · 2005 · 39 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanomaterialsNanotechnologyCarrier TransportMetalsNanoelectronicsNanostructured Electronic MaterialsNanowiresThin Film Electrical PropertiesElectron Beam TransportElectron Mobility In NanowiresMagnetoresistanceMetal NanowiresNanowire CharacterizationNanowire Transport PropertiesTemperature DependenceVariable-range Hopping
Pt nanowires were fabricated using electron-beam (EB)- and focused-ion-beam (FIB)-induced deposition. The resistance of the EB-deposited nanowires was high (≈10 7 Ω) as deposited and increased markedly when cooled down. The observed temperature dependence of the resistance of the EB-deposited wires indicates that the electron transport in the wires is dominated by variable range hopping (VRH). Coulomb oscillations were observed at temperatures up to ≈200 K for EB-deposited wires simultaneously with VRH. Postannealing was effective to reduce the resistance. The resistance of the FIB-deposited nanowires, in contrast, hardly depended on temperature. Positive magnetoresistance due to weak antilocalization was observed in the case of the FIB-deposited wires.
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Conduction in non-crystalline materials
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