IEEE Transactions on Electron Devices · 2011 · 27 citations · 17 references
Optical MaterialsEngineeringPhoto-electrochemical CellOptoelectronic DevicesPhotoelectric SensorTransparent UltravioletTransparent Uv PhotosensorsPhotodetectorsOptical PropertiesOptical SystemsPhotonicsElectrical EngineeringPhotoelectric MeasurementUv-vis SpectroscopyOptical SensorsApplied PhysicsOptoelectronicsOptical DevicesSelf-assembling Ordered Zno
This paper demonstrates the fabrication of transparent ultraviolet (UV) photosensors with a self-assembling ordered ZnO nanowired network. The average optical transmission of the entire networked photosensor structure in the visible range of the spectrum is about 70%. At an applied bias of 5 V and 340-nm irradiation, the photoresponsivity and the ratio of UV-to-visible rejection was 175.58 and 207.63 A/W for the transparent UV photosensors. For a bandwidth of 100 Hz and an applied bias of 5 V, the noise equivalent power and normalized detectivity of the devices were 2.32 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> W and 4.36 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> cm · Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sup> /W , respectively.
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Room-Temperature Ultraviolet Nanowire Nanolasers
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ZnO Nanowire UV Photodetectors with High Internal Gain
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Semiconductor ultraviolet detectors
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