New substrates for HTSC microwave devices

Abstract

A new substrate material LSAT, a 30/70 mole % solid solution between LaA10 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and Sr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> AITaO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> , has been prepared for the purposes of eliminating twinning, strain and non-isotropic microwave properties found in pure LaA10 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> substrates. At 300 K and 30/70 mole %, LSAT is cubic with lattice parameter of 7.737 Å. The dielectric properties of single crystal LSAT (30/70 mole %) substrates have been measured at 10 GHz and 300 K and determined to be: dielectric constant ε=22.5; and, loss tangent tan(δ) ⩽ 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . High quality c -axis oriented high critical temperature superconducting (HTSC), YBa <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> 0 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7-δ</sub> (YBCO), thin films have been deposited on (001) single crystal LSAT substrates. The crystal quality of these films is excellent as evidenced by the full width half maximum (FWHM) rocking curve widths of typically 300 arc-seconds. Critical current densities (as measured using magnetization) are about 4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 10 K. Microwave film properties include an onset transition temperature (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) higher than 91 K, transition width (ΔT <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) less than 5 K, surface resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> lower than copper (30 mω) at 85 K and 35 GHz for a film of thickness 2500 Å.