Ferroelectric polymer Langmuir-Blodgett films for nonvolatile memory applications

TLDR

VDF copolymers, including Langmuir‑Blodgett films, have emerged as promising materials for nonvolatile memory applications. The authors review integrating LB ferroelectric polymer films with semiconductor technology to create NV‑FeRAM, emphasizing the need to control switching dynamics and scale up production. They employ a 70:30 P(VDF‑TrFE) copolymer in metal‑ferroelectric‑insulator‑semiconductor capacitors and also discuss field‑effect transistor–based devices. LB films enable low‑voltage operation, yet two technical hurdles must be overcome.

Abstract

We review the potential for integrating ferroelectric polymer Langmuir-Blodgett (LB) films with semiconductor technology to produce nonvolatile ferroelectric random-access memory (NV-FRAM or NV-FeRAM) and data-storage devices. The prototype material is a copolymer consisting of 70% vinylidene fluoride (VDF) and 30% trifluoroethylene (TrFE), or P(VDF-TrFE 70:30). Recent work with LB films and more conventional solvent-formed films shows that the VDF copolymers are promising materials for nonvolatile memory applications. The prototype device is the metal-ferroelectric-insulator-semiconductor (MFIS) capacitance memory. Field-effect transistor (FET)-based devices are also discussed. The LB films afford devices with low-voltage operation, but there are two important technical hurdles that must be surmounted. First, an appropriate method must be found to control switching dynamics in the LB copolymer films. Second, the LB technology must be scaled up and incorporated into the semiconductor-manufacturing process, but since there is no precedent for mass production of LB films, it is difficult to project how long this will take.