Memristive devices for stochastic computing

Abstract

We show resistive switching effects in memristive devices exhibit significant stochasticity. When the switching is dominated by a single filament, the switching time is fully random and shows a broad distribution. However, the switching distribution can be predicted and responds well to controlled changes in the programming conditions. The native stochastic characteristic can be used to generate random bit streams with predictable biases that can lead to efficient and error-tolerant computing.