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Spin Transfer Switching and MR Properties of Co/Pt Multilayered Free Layers for Submicron Sized Magneto-Optical Light Modulation Device
13
Citations
10
References
2010
Year
Spin TorqueMagnetic PropertiesOptical MaterialsEngineeringMagnetic ResonanceSpin Transfer SwitchingTunnel MagnetoresistanceSpintronic MaterialMagnetic MaterialsMagnetoresistanceFull Magnetization ReversalMagnetismMagnetoplasmonicsOptical PropertiesQuantum MaterialsOptical SwitchingMagnetic Thin FilmsMaterials SciencePhotonicsPhysicsNanotechnologyLow-dimensional SystemsGiant MagnetoresistanceMagnetic MaterialMagnetic MediumSpintronicsNatural SciencesApplied PhysicsThin FilmsMagnetic DeviceOptoelectronicsMr Properties
Co/Pt multilayered films show strong perpendicular magnetic anisotropy and have a large magneto-optical Kerr effect in the short wavelength side. To use these films with submicron spatial light modulators driven by spin transfer switching (STS), we fabricated current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunnel magnetoresistance (TMR) devices with Co/Pt multilayers for free layers and investigated the MR properties, the STS characteristics, and the Kerr effects. A Kerr hysteresis loop was clearly observed in the CPP-GMR device, which was 125 × 180 nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Full magnetization reversal of the Co/Pt multilayered film by spin transfer torque was demonstrated for a CPP-GMR device with a Cu-based top electrode. On the other hand, there was hardly any resistance change in a CPP-GMR with a transparent top electrode due to the low MR ratio of the device. A TMR stack with a Ag buffer layer showed a strong perpendicular magnetic anisotropy. An MR curve was detected for a TMR device with a transparent top electrode.
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