A silicon die as a frequency source

Abstract

A monolithic and unpackaged silicon die is presented as a frequency source suitable for quartz crystal resonator (XTAL) and oscillator (XO) replacement. The frequency source is referenced to a free-running, frequency-trimmed and temperature-compensated 3 GHz RF LC oscillator. A programmable divider array enables the device to provide frequencies ranging from 6 to 133 MHz. A post-processed Faraday shield contains fringing electromagnetic fields and enables the device to be delivered in unpackaged form such that it can be assembled into any package or via any assembly technique. The device dissipates approximately 2mA from a 1.8-3.3 V power supply and drifts no more than ±300ppm over all operating conditions including a panel of industry-standard reliability tests.