A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness

Abstract

It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU and SEL cross sections vs the energy deposited in this volume, /spl sigma//sub ion/(/spl epsi/). These /spl sigma//sub ion/(/spl epsi/) and d can be used for calculating the proton induced cross sections /spl sigma//sub p/. A study of Harris HM65162 CMOS SRAMs demonstrates this method. The calculated /spl sigma//sub p/ is in good agreement with the experimental /spl sigma//sub p/.