IEEE Electron Device Letters · 2005 · 48 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDielectricsSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsThin-film MaterialsThin-film TransistorsDielectric BreakdownEquivalent Oxide ThicknessGate Dielectric EngineeringGate DielectricsHigh-dielectric-constant MaterialsHydrogen PassivationThin-film DielectricsThreshold Voltage
We have integrated a high-/spl kappa/ LaAlO/sub 3/ dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-/spl kappa/ dielectric.
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